Capacitor and fabrication method thereof
US9966428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Jan 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a first conductive layer, a first dielectric layer, and a second conductive layer on the material layer; patterning the first dielectric layer and the second conductive layer to form a patterned first dielectric layer and a middle electrode; forming a second dielectric layer on the first conductive layer and the middle electrode; removing part of the second dielectric layer to form a patterned second dielectric layer; forming a third conductive layer on the first conductive layer and the patterned second dielectric layer, wherein the third conductive layer contacts the first conductive layer directly; and removing part of the third conductive layer to expose part of the patterned second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.