Substrate processing apparatus having ground electrode
US9970111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2014 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32779
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.