Patent · US Active

Method of reducing defects in an epitaxial layer

US9972488B2 · kind B2 · utility

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1References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Helmut Oefner · Zorneding, DE
Johannes Baumgartl · Arnoldstein, AT

Key dates

Filing date	Mar 10, 2016
Grant date	May 15, 2018
Priority date	—
Expiry date	Mar 10, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02658
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of reducing defects in an epitaxial layer. The method includes forming one or more barrier structures within a peripheral edge region of a wafer substrate, and forming an epitaxial layer over a surface of the wafer substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.