Atomic layer etching of tungsten for enhanced tungsten deposition fill

US9972504B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Chiukin Steven Lai · Sunnyvale, US
• Keren Jacobs Kanarik · Los Altos, US
• Samantha Tan · Fremont, US
• Anand Chandrashekar · Sunnyvale, US
• Teh-Tien Su · Milpitas, US
• Wenbing Yang · Fremont, US
• Michael Wood · Floyds Knobs, US
• Michal Danek · Cupertino, US

Key dates

• Filing date: Aug 19, 2015
• Grant date: May 15, 2018
• Expiry date: Aug 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28556
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.