Inventor · Fremont, CA, US

Wenbing Yang

27Patents
11h-index
47Co-inventors
75Inventor score

Filing activity: Mar 20, 2003 → Feb 7, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9576811B2 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) Electricity 59 Active
US9806252B2 Dry plasma etch method to pattern MRAM stack Electricity 54 Active
US9257638B2 Method to etch non-volatile metal materials Electricity 51 Active
US9805941B2 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) Electricity 41 Active
US9130158B1 Method to etch non-volatile metal materials Electricity 34 Active
US10056264B2 Atomic layer etching of GaN and other III-V materials Electricity 20 Active
US10096487B2 Atomic layer etching of tungsten and other metals Emerging Cross-Sectional Technologies 19 Active
US10374144B2 Dry plasma etch method to pattern MRAM stack Electricity 18 Active
US9972504B2 Atomic layer etching of tungsten for enhanced tungsten deposition fill Electricity 18 Active
US7111203B2 Method for implementing data backup and recovery in computer hard disk Physics 16 Expired
US10186426B2 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch) Electricity 14 Active
US10763083B2 High energy atomic layer etching Electricity 11 Active
US7447888B2 Method for restoring computer operating system Physics 6 Expired
US10515816B2 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) Electricity 6 Active
US11069535B2 Atomic layer etch of tungsten for enhanced tungsten deposition fill Electricity 5 Active
US10749103B2 Dry plasma etch method to pattern MRAM stack Electricity 5 Active
US10727073B2 Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces Electricity 4 Active
US12105422B2 Photoresist development with halide chemistries Electricity 4 Active
US9391267B2 Method to etch non-volatile metal materials Electricity 2 Active
US11935758B2 Atomic layer etching for subtractive metal etch Electricity 1 Active
US11450513B2 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials Electricity 1 Active
US9502600B2 Inorganic solution and solution process for electronic and electro-optic devices Emerging Cross-Sectional Technologies 0 Active
US12256645B2 Chemical etch nonvolatile materials for MRAM patterning Electricity 0 Active
US12266542B2 Atomic layer etching for subtractive metal etch Electricity 0 Active
US12080562B2 Atomic layer etch and ion beam etch patterning Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.