Methods of forming graphene contacts on source/drain regions of FinFET devices
US9972537B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 24, 2016 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes forming a gate structure above a portion of a fin and performing a first epitaxial growth process to form a silicon-carbide (SiC) semiconductor material above the fin in the source and drain regions of a FinFET device. In this example, the method also includes performing a heating process so as to form a source/drain graphene contact from the silicon-carbide (SiC) semiconductor material in both the source and drain regions of the FinFET device and forming first and second source/drain contact structures that are conductively coupled to the source/drain graphene contact in the source region and the drain region, respectively, of the FinFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.