Thick FDSOI source-drain improvement

US9972721B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Marcel Richter · Haag, CH
• Ardechir Pakfar · Dresden, DE
• Armin Muehlhoff · Dresden, DE

Key dates

• Filing date: Oct 28, 2016
• Grant date: May 15, 2018
• Expiry date: Oct 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A method of forming a semiconductor device is disclosed including providing a semiconductor-on-insulator substrate comprising a semiconductor bulk substrate, a buried insulating layer positioned on the semiconductor bulk substrate and a semiconductor layer positioned on the buried insulating layer, providing at least one metal-oxide semiconductor gate structure positioned above the semiconductor layer comprising a gate electrode and a spacer formed adjacent to the gate electrode, selectively removing an upper portion of the semiconductor layer so as to define recessed portions of the semiconductor layer and epitaxially forming raised source/drain regions on the recessed portions of the semiconductor layer.