Film forming method using reversible decomposition reaction
US9976217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2014 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method of forming a thin film feeds a raw material gas causing a reversible decomposition reaction toward an upper surface of substrate placed on a placing table in a processing container; decomposes the raw material gas with a predetermined decomposing scheme thereby forming a thin film of the raw material gas on the surface of the substrate; and feeds a decomposition restraint gas having a characteristic of restraining a thermal decomposition of the raw material gas separately from the raw material gas toward a peripheral portion of the substrate when the raw material gas is fed to the substrate, thereby restraining the thermal decomposition of the raw material gas and selectively preventing the thin film from being formed in the peripheral portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.