Systems for cooling RF heated chamber components
US9978565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2011 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32238
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.