Method of forming low resistivity fluorine free tungsten film without nucleation
US9978605B2 · kind B2 · utility
19Cited by
150References
23Claims
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Key dates
| Filing date | Jan 4, 2017 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Jan 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in cycles of temporally separated pulses, without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.