Selective formation of metal silicides
US9981286B2 · kind B2 · utility
9Cited by
104References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Oct 23, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D2203/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.