High-throughput system and method for post-implantation single wafer warm-up
US9982338B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | May 17, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | May 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.