Implementation of co-gases for germanium and boron ion implants
US9984855B2 · kind B2 · utility
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14References
18Claims
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Key dates
| Filing date | Nov 17, 2010 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Jul 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.