Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas
US9984869B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 17, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Apr 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is for forming a nitride or oxide film by plasma-assisted cyclic deposition, one cycle of which includes: feeding a first reactant, a second reactant, and a precursor to a reaction space where a substrate is placed, wherein the second reactant flows at a first flow ratio wherein a flow ratio is defined as a ratio of a flow rate of the second reactant to a total flow rate of gases flowing in the reaction space; and stopping feeding the precursor while continuously feeding the first and second reactants at a flow ratio which is gradually reduced from the first flow ratio to a second flow ratio while applying RF power to the reaction space to expose the substrate to a plasma. The second reactant is constituted by a hydrogen-containing compound or oxygen-containing compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.