Film forming method
US9984875B2 · kind B2 · utility
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2References
8Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 20, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Feb 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.