Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions

US9984894B2 · kind B2 · utility

Assignees

• Cree, Inc. · US
• AUBURN UNIVERSITY · US

Inventors

• Sarit Dhar · Cary, US
• Sei-Hyung Ryu · Cary, US
• Anant Agarwal · San Jose, US
• John R. Williams · Tyler, US

Key dates

• Filing date: Aug 3, 2011
• Grant date: May 29, 2018
• Expiry date: Oct 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.