Semiconductor structure and manufacturing method thereof
US9984918B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2016 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.