Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface
US9985164B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.