Interface engineering during MGO deposition for magnetic tunnel junctions
US9988715B2 · kind B2 · utility
1Cited by
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9Claims
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Key dates
| Filing date | Nov 6, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Nov 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating magnetic devices are described herein. Methods involve exposing a magnetic film, such as a CoFeB film, to a reducing agent before, during, or after depositing a metal oxide film using atomic layer deposition or chemical vapor deposition. Some methods include exposing the magnetic film in cycles involving exposure to a reducing agent, exposure to a magnesium-containing precursor, and exposure to an oxidant. Methods are suitable for depositing a magnesium oxide layer on a CoFeB layer to form part of a magnetic tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.