Wafer-based light source parameter control
US9989866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70575
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography method includes producing, from an optical source, a pulsed light beam; and scanning the pulsed light beam across a substrate of a lithography exposure apparatus to expose the substrate with the pulsed light beam including exposing each sub-area of the substrate with the pulsed light beam. A sub-area is a portion of a total area of the substrate. For each sub-area of the substrate, a lithography performance parameter associated with the sub-area of the substrate is received; the received lithography performance parameter is analyzed, and, based on the analysis, a first spectral feature of the pulsed light beam is modified and a second spectral feature of the pulsed light beam is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.