Semiconductor memory device and memory system
US9990998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jan 19, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a plurality of memory cells, a plurality of word lines, including a word line that is connected to a group of the memory cells, and a control circuit configured to execute a write operation on the memory cells of the group. The write operation includes multiple program loops including a first program loop and a second program loop that is executed at a later time than the first program loop, and for each subsequent program loop, a program voltage that is applied to the first word line is increased from that of a current program loop. The program voltage is increased by a first amount from that of the current program loop if the next program loop is the first program loop and by a second amount that is less than the first amount if the next program loop is the second program loop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.