Ion source cleaning in semiconductor processing systems
US9991095B2 · kind B2 · utility
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105References
7Claims
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Key dates
| Filing date | Aug 12, 2009 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.