Method for etch-based planarization of a substrate
US9991133B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Aug 11, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Aug 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1005
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques herein provide an etch-based planarization technique. An initial film is deposited on a substrate. Deposition of this initial film results in a non-planar film because of differences in area density of underlying structures (for example, open areas compared to closely spaced trenches). Etch processes are executed that use a reverse lag RIE process to planarize the initial film, and then another coat of the film material can be deposited, resulting in a planar surface. Such techniques can planarized substrates without using chemical mechanical polishing (CMP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.