Etching method and etching apparatus
US9991138B2 · kind B2 · utility
321Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jul 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.