Semiconductor device on hybrid substrate and method of manufacturing the same
US9991262B1 · kind B1 · utility
20Cited by
10References
20Claims
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Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jun 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8311
Abstract
A semiconductor device includes PMOS and NMOS FinFET devices disposed on a hybrid substrate including a first substrate and a second substrate, in which a fin of the PMOS FinFET device is formed on the first substrate having a top surface with a (100) crystal orientation, and another fin of the NMOS FinFET device is formed on the second substrate having a top surface with a (110) crystal orientation. The semiconductor device further includes a capping layer enclosing a buried bottom portion of the fin of the PMOS FinFET device, and another capping layer enclosing an effective channel portion of the fin of the PMOS FinFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.