Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device

US9991342B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• ALEDIA · FR

Inventors

• Bérangère Hyot · Eybens, FR
• Benoît Amstatt · Grenoble, FR
• Marie-Francoise Armand · Échirolles, FR
• Florian Dupont · Grenoble, FR

Key dates

• Filing date: Oct 25, 2013
• Grant date: Jun 5, 2018
• Expiry date: Oct 25, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/932
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.