Methods for performing a gate cut last scheme for FinFET semiconductor devices

US9991361B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Xintuo Dai · Rexford, US
• Haigou Huang · Rexford, US
• Xusheng Wu · Hsinchu, TW

Key dates

• Filing date: May 26, 2016
• Grant date: Jun 5, 2018
• Expiry date: Jun 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211

Abstract

A method includes forming a placeholder gate structure embedded in a dielectric layer. The placeholder gate structure includes a sacrificial material. A first hard mask layer is formed above the dielectric layer. The first hard mask layer and the sacrificial material are the same material. A second hard mask layer is formed above the first hard mask layer. The second hard mask layer is patterned to define an opening therein exposing a portion of the first hard mask layer and being disposed above a portion of the placeholder gate structure. The exposed portion of the first hard mask layer and the portion of the sacrificial material of the placeholder gate structure disposed below the opening are removed to define a gate cut cavity and divide the placeholder gate structure into first and second segments. A dielectric material is formed in the gate cut cavity.