Passivation structure for semiconductor devices
US9991399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Sep 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky diode is disclosed that includes a silicon carbide substrate, a silicon carbide drift layer, a Schottky contact, and a passivation structure. The silicon carbide drift layer provides an active region and an edge termination region about the active region. The Schottky contact has sides and a top extending between the two sides and includes a Schottky layer over the active region and an anode contact over the Schottky layer. The passivation structure covers the edge termination region, the sides of the Schottky contact, and at least a portion of the top of the Schottky contact. The passivation structure includes a first silicon nitride layer, a silicon dioxide layer over the first silicon nitride layer, and a second silicon nitride layer over the silicon dioxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.