Method of forming a composite substrate
US9991414B2 · kind B2 · utility
0Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Apr 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant asubstrate. The III-nitride layer has a bulk lattice constant alayer. In some embodiments, [(|asubstrate−alayer|)/asubstrate]*100% is no more than 1%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.