Method for implanting a piezoelectric material
US9991439B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jul 5, 2011 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Feb 1, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.