EUV-mirror, optical system with EUV-mirror and associated operating method
US9997268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2016 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Sep 12, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/067
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.