Plasma processing method and plasma processing apparatus
US9997337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2015 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.