Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9997357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2014 |
| Grant date | Jun 12, 2018 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.