Patent · US Active

Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor device

US9997459B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jochen Hilsenbeck · Villach, AT
Jens Peter Konrath · Villach, AT
Stefan Krivec · Villach, AT

Key dates

Filing date	Feb 8, 2017
Grant date	Jun 12, 2018
Priority date	—
Expiry date	Feb 8, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body having a front face, a back face and an active zone at the front face. A front surface metallization layer having a front face and a back face is disposed over the semiconductor body so that the back face of the front surface metallization layer faces the front face of the semiconductor body and is electrically connected to the active zone. An upper barrier layer made of amorphous molybdenum nitride is disposed on the front face of the front surface metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.