Semiconductor device with transistor cells and enhancement cells with delayed control signals

US9997602B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE
• Matteo Dainese · Munich, DE
• Christian Jaeger · Munich, DE

Key dates

• Filing date: Dec 19, 2015
• Grant date: Jun 12, 2018
• Expiry date: Mar 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/84

Abstract

A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.