Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
USRE42619E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2002 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Nov 14, 2022 |
Classification
- Technology area (CPC —)General
Abstract
Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b), which can include an antiferromagnetic layer adjacent the storage layer. The blocking temperature of the magnetisation magnetization of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation magnetization. A magnetic field (34) or a magnetic torque created by the injection of spin polarized electrons is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.