Semiconductor device and method of manufacturing the same
USRE46122E1 · kind E1 · reissue
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Key dates
| Filing date | Apr 27, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Apr 27, 2035 |
Classification
- Technology area (CPC —)General
Abstract
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.