Patent · US Active

Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors

USRE47241E1 · kind E1 · reissue

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46References
46Claims
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Key dates

Filing dateDec 22, 2015
Grant dateFeb 12, 2019
Priority date
Expiry dateDec 22, 2035

Classification

  • Technology area (CPC —)General

Abstract

A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.