Copper electrodeposition in microelectronics

USRE49202E1 · kind E1 · reissue

Assignee

• MacDermid Enthone Inc. · US

Inventors

• Vincent Paneccasio, Jr. · Madison, US
• Xuan Lin · Northford, US
• Paul Figura · Orange, US
• Richard Hurtubise · Clinton, US

Key dates

• Filing date: Jul 9, 2018
• Grant date: Sep 6, 2022
• Expiry date: Jul 9, 2038

Classification

• Technology area (CPC —): General

Abstract

An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.