Method for processing a substrate using a single phase proximity head having a controlled meniscus
US8313580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jul 15, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate. The method also includes balancing an amount of chemical being delivered to the proximity head with an amount of chemical removed from the meniscus so that the meniscus maintains a substantially constant volume of the chemical. The amount of chemical removed from the meniscus includes at least the chemical remainder left behind on …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.