Alexandre Acovic
8Patents
8h-index
6Co-inventors
54Inventor score
Filing activity: Feb 25, 1992 → Jun 24, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5446299A | Semiconductor random access memory cell on silicon-on-insulator with dual control gates | Electricity | 181 | Expired |
| US5886376A | EEPROM having coplanar on-insulator FET and control gate | Electricity | 160 | Expired |
| US5960265A | Method of making EEPROM having coplanar on-insulator FET and control gate | Electricity | 145 | Expired |
| US5567635A | Method of making a three dimensional trench EEPROM cell structure | Electricity | 143 | Expired |
| US5315142A | High performance trench EEPROM cell | Electricity | 97 | Expired |
| US5411905A | Method of making trench EEPROM structure on SOI with dual channels | Electricity | 64 | Expired |
| US5331188A | Non-volatile DRAM cell | Performing Operations; Transporting | 57 | Expired |
| US5389567A | Method of forming a non-volatile DRAM cell | Performing Operations; Transporting | 25 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.