Amy L. Child
5Patents
1h-index
16Co-inventors
40Inventor score
Filing activity: Mar 11, 2010 → Dec 20, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9293586B2 | Epitaxial block layer for a fin field effect transistor device | Electricity | 4 | Active |
| US8415212B2 | Method of enhancing photoresist adhesion to rare earth oxides | Electricity | 1 | Active |
| US10236343B2 | Strain retention semiconductor member for channel SiGe layer of pFET | Electricity | 0 | Active |
| US9508850B2 | Epitaxial block layer for a fin field effect transistor device | Electricity | 0 | Active |
| US10056381B2 | Punchthrough stop layers for fin-type field-effect transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.