Epitaxial block layer for a fin field effect transistor device

US9508850B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Zhenyu Hu · Leonberg, DE
• Richard J. Carter · Los Altos, US
• Andy Wei · Queensbury, US
• Qi Zhang · State College, US
• Sruthi Muralidharan · Troy, US
• Amy L. Child · Saratoga Springs, US

Key dates

• Filing date: Feb 1, 2016
• Grant date: Nov 29, 2016
• Expiry date: Feb 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.