Punchthrough stop layers for fin-type field-effect transistors
US10056381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2016 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device structures for a FinFET and fabrication methods for making a device structure for a FinFET. A first layer containing a first dopant is formed on a first region of a substrate. A second layer containing a second dopant is formed on a second region of the substrate. A first plurality of fins are formed and are each located in a respective trench extending from the substrate through the first layer. A second plurality of fins are formed and are each located in a respective trench extending from the substrate through the second layer. The first dopant is transferred from the first layer to a first section in each of the first plurality of fins and the second dopant is transferred from the second layer to a first section in each of the second plurality of fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.