Baonian Guo
5Patents
1h-index
13Co-inventors
44Inventor score
Filing activity: Mar 22, 2012 → Jul 26, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8722431B2 | FinFET device fabrication using thermal implantation | Electricity | 4 | Active |
| US11430877B2 | Ion implantation to reduce nanosheet gate length variation | Electricity | 1 | Active |
| US10522549B2 | Uniform gate dielectric for DRAM device | Electricity | 0 | Active |
| US12230691B2 | Three dimensional device formation using early removal of sacrificial heterostructure layer | Performing Operations; Transporting | 0 | Active |
| US11955533B2 | Ion implantation to reduce nanosheet gate length variation | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.