FinFET device fabrication using thermal implantation
US8722431B2 · kind B2 · utility
4Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.