Brian Maertz
7Patents
1h-index
14Co-inventors
37Inventor score
Filing activity: Sep 25, 2015 → Dec 30, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10559744B2 | Texture breaking layer to decouple bottom electrode from PMTJ device | Electricity | 2 | Active |
| US10868233B2 | Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures | Electricity | 1 | Active |
| US11404630B2 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same | Physics | 0 | Active |
| US10636960B2 | Strained perpendicular magnetic tunnel junction devices | Electricity | 0 | Active |
| US10804460B2 | Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction | Electricity | 0 | Active |
| US10770651B2 | Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same | Electricity | 0 | Active |
| US11031545B2 | High stability free layer for perpendicular spin torque transfer memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.