Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction
US10804460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2016 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Jul 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.