High stability free layer for perpendicular spin torque transfer memory

US11031545B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Kaan Oguz · Beaverton, US
• Kevin P. O'Brien · Cincinnati, US
• Brian S. Doyle · Portland, US
• Mark L. Doczy · Beaverton, US
• Charles C. Kuo · Hillsboro, US
• Daniel G. Ouellette · Portland, US
• Christopher J. Wiegand · Portland, US
• MD Tofizur Rahman · Portland, US
• Brian Maertz · Lompoc, US

Key dates

• Filing date: Sep 30, 2016
• Grant date: Jun 8, 2021
• Expiry date: Sep 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.