Cai Jun
5Patents
5h-index
8Co-inventors
45Inventor score
Filing activity: Mar 27, 2000 → Feb 7, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6417544B1 | Diode-like plasma induced damage protection structure | Electricity | 21 | Expired |
| US6344385B1 | Dummy layer diode structures for ESD protection | Electricity | 16 | Expired |
| US6552399B2 | Dummy layer diode structures for ESD protection | Electricity | 12 | Expired |
| US6551937B2 | Process for device using partial SOI | Electricity | 12 | Expired |
| US6265251A | Method to fabricate a thick oxide MOS transistor for electrostatic discharge protection in an STI process | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.